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Effect of Ferroelectric Damping on Dynamic Characteristics of Negative Capacitance Ferroelectric MOSFET

机译:铁电阻尼对负电容铁电MOSFET动态特性的影响

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摘要

Static Landau theory has been widely used to confirm negative capacitance ferroelectric MOSFET (FeFET) as a low power switch with sub-60-mV/decade subthreshold swing. However, dynamic switching considering damping effect in ferroelectrics is rarely evaluated. Based on Landau-Khalatnikov theory, dynamic FeFET characteristics are obtained. For experimentally extracted Pb(Zr0.2Ti0.8)O3 (PZT) damping constant ξFE = 75 Ω · m, the amplified gate capacitance induced by negative capacitance occurs when frequency is below a few MHz for large ξFE. For transient simulation, IDS exhibits a slow response to the rapid change of VG so that the hysteretic IDS-VG curve is generated. Furthermore, inverter prediction with complementary FeFETs shows that the dynamic short circuit switching power is much higher than the static one. These results are attributed to the large PZT response time in comparison with the operation period. For a guidance on ferroelectric selection and improvement, a wide range of damping constants are used to predict the corresponding maximum operation frequency, within which the dynamic and static responses of FeFETs are the same. It indicates that the ferroelectrics with low damping constant are essential to utilize FeFET advantages in high-frequency circuit applications.
机译:静态Landau理论已被广泛用于确认负电容铁电MOSFET(FeFET)作为具有低于60mV / decade亚阈值摆幅的低功率开​​关。然而,很少评估考虑铁电体中的阻尼效应的动态开关。基于Landau-Khalatnikov理论,获得了动态FeFET特性。对于实验提取的Pb(Zr0.2Ti0.8)O3(PZT)阻尼常数ξFE= 75Ω·m,当大ξFE的频率低于几MHz时,由负电容引起的放大的栅极电容就会出现。对于瞬态仿真,IDS对VG的快速变化表现出较慢的响应,因此会生成滞后的IDS-VG曲线。此外,具有互补FeFET的逆变器预测表明,动态短路开关功率比静态短路开关功率高得多。这些结果归因于与运行周期相比,PZT响应时间长。为了指导铁电的选择和改进,广泛的阻尼常数用于预测相应的最大工作频率,其中FeFET的动态和静态响应相同。这表明低阻尼常数的铁电体对于在高频电路应用中利用FeFET的优势至关重要。

著录项

  • 来源
    《IEEE Transactions on Electron Devices》 |2016年第9期|3636-3641|共6页
  • 作者单位

    Department of Electrical and Computer Engineering, National University of Singapore, Singapore;

    Agency for Science, Technology and Research, Institute of Materials Research and Engineering, Singapore;

    Department of Electrical and Computer Engineering, National University of Singapore, Singapore;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Iron; Capacitance; Damping; Switches; Logic gates; MOSFET; Force;

    机译:铁;电容;阻尼;开关;逻辑门;MOSFET;强制;

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