机译:使用混合三阳极结构增强AlGaN / GaN肖特基势垒二极管的电性能和散热
Power and Wide-Band-Gap Electronics Research Laboratory, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland;
Power and Wide-Band-Gap Electronics Research Laboratory, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland;
Power and Wide-Band-Gap Electronics Research Laboratory, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland;
Power and Wide-Band-Gap Electronics Research Laboratory, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland;
Logic gates; Aluminum gallium nitride; Wide band gap semiconductors; HEMTs; Gallium nitride; Linearity;
机译:AlGaN / GaN与晶格匹配的InAlN / GaN异质结构肖特基势垒二极管的电特性比较
机译:硅衬底上加热对AlGaN / GaN肖特基势垒二极管中电输运的影响
机译:混合BATIO_3 / SIN_X / ALGAN / GAN横向肖特基势垒二极管,具有低开启和高击穿性能
机译:新型高性能横向AlGaN / GaN肖特基势垒二极管,采用具有极化增强沟道的高效场板
机译:用于AlGaN / GaN和InAlN / GaN二极管以及在硅(111)衬底上生长的高迁移率晶体管的CMOS兼容氧化钌肖特基接触的研究。
机译:双异质结硅衬底上AlGaN / GaN肖特基势垒二极管的理论和实验研究
机译:阳极沟槽几何对AlGan / GaN肖特基屏障二极管电学性能的影响