Optimum pMOS-to-nMOS Width Ratio for Efficient Subthreshold CMOS Circuits

摘要

The subthreshold region of operation in digital CMOS circuits provides a suitable low-power solution for many applications that need tremendously low-energy operation. However, this advantage comes at the cost of speed, so enhancing the speed of subthreshold circuits can expand their application spectrum. This paper presents the optimum pMOS-to-nMOS width ratio that leads to the maximum frequency of operation in the subthreshold region with no extra energy cost. The optimum pMOS-to-nMOS width ratio is obtained and compared through three approaches: 1) finding the maximum current-over-capacitance ratio of a biased transistor; 2) deriving an analytical expression by minimizing the delay of an inverter; and 3) simulating different CMOS logic gates in the subthreshold region. Simulation results illustrate that in the subthreshold region, the frequency attains its maximum at the optimum pMOS-to-nMOS width ratio independent of the supply voltage. Using this optimum value in designing a carry-look-ahead adder improves the propagation delay, energy consumption, and energy-delay product by up to 33%, 36%, and 57%, receptively, compared with when the conventional pMOS-to-nMOS width ratio (in the superthreshold region) is used. We verified our analytical model by performing circuit simulations in four CMOS technologies (TSMC 180 nm, IBM 130 nm, TSMC 90 nm, and ST 65 nm).