机译:垂直GaN功率二极管中结终端扩展的仿真
Department of Electrical and Computer Engineering, Center for Photonics and Nanoelectronics, Lehigh University, Bethlehem, PA, USA;
Sandia National Laboratories, Albuquerque, NM, USA;
Sandia National Laboratories, Albuquerque, NM, USA;
Sandia National Laboratories, Albuquerque, NM, USA;
Sandia National Laboratories, Albuquerque, NM, USA;
Sandia National Laboratories, Albuquerque, NM, USA;
Gallium nitride; Junctions; Avalanche breakdown; Ionization; Silicon; Doping; Semiconductor diodes;
机译:具有阶梯式三联结终端延伸的垂直GaN P-N二极管的设计与制造
机译:垂直GaN二极管中的反掺杂多区结终止扩展结构
机译:具有离子注入结终止扩展的改进的垂直GaN肖特基二极管
机译:GaN功率二极管阶梯蚀刻结终止扩展的仿真和设计
机译:GaN-On-GaN垂直功率器件的电子显微镜表征= GaN-On-GaN垂直功率器件的电子显微镜表征
机译:4英寸硅衬底上的高功率基于GaN的垂直发光二极管
机译:垂直GaN二极管中的反掺杂多态连接终端延伸结构
机译:FY2016体积GaN衬底上垂直氮化镓功率肖特基二极管的制备与表征。