Improved Vertical GaN Schottky Diodes with Ion Implanted Junction Termination Extension

摘要

The realization of selectively implanted p-type regions in GaN as well as an understanding of processing effects that cause carrier type conversion are key enabling steps for vertical GaN devices. Here, GaN Schottky barrier diodes (SBDs) with edge termination formed by either a field plate or junction termination extension (JTE) achieved by ion implanted and symmetric multicycle rapid thermal annealing (SMRTA) are presented. The devices with JTE exhibited substantially reduced leakage currents and improved turn-on characteristics. This is attributed to the elimination of the plasma process steps associated with the deposition and patterning of the field oxide layer required in a field plate process. The breakdown characteristics were studied by electroluminescence imaging, and is indicative of avalanche behavior. The realization of vertical GaN devices with low reverse leakage and ion implanted termination regions represents a key step for future power electronic devices. (C) 2016 The Electrochemical Society. All rights reserved.