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首页> 外文期刊>IEEE Transactions on Electron Devices >Impact of Charges at Ferroelectric/Interlayer Interface on Depolarization Field of Ferroelectric FET With Metal/Ferroelectric/Interlayer/Si Gate-Stack
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Impact of Charges at Ferroelectric/Interlayer Interface on Depolarization Field of Ferroelectric FET With Metal/Ferroelectric/Interlayer/Si Gate-Stack

机译：金属/铁电/层间/ SI门堆在铁电/层间界面铁电/层间界面对铁电/层间界面的影响

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摘要

This article theoretically investigates the impact of charges at the ferroelectric/interlayer interface on the depolarization field of ferroelectric FET (FeFET) with metal/ferroelectric/interlayer/Si gate structure. The interfacial charges include fixed charges and trapped/detrapped charges. We find that the positive or negative interfacial charges (similar to 10(13) cm(-2)) can align the directions of the depolarization field and corresponding polarization in the ferroelectric. This article may provide insight into the device design of FeFET.
机译：本文理论上研究了金属/铁电/层间/ Si栅极结构的铁电/层间界面在铁电/层间界面上的电荷对铁路/层间界面的影响。界面电荷包括固定电荷和捕获/棘爪的电荷。我们发现正或负界面电荷（类似于10（13 )cm（-2））可以对准铁电解场的去极化场的方向和相应的偏振。本文可以提供对FEFET设备设计的洞察。

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  • 来源
    《IEEE Transactions on Electron Devices》 |2020年第10期|4500-4506|共7页
  • 作者

    Wang Xiaolei; Sun Xiaoqing; Zhang Yuanyuan; Zhou Lixing; Xiang Jinjuan; Ma Xueli; Yang Hong; Li Yongliang; Han Kai; Luo Jun; Zhao Chao; Wang Wenwu;

  • 作者单位

    Chinese Acad Sci Inst Microelect Key Lab Microelect Devices & Integrated Technol Beijing 100029 Peoples R China|Univ Chinese Acad Sci Sch Microelect Beijing 100049 Peoples R China;

    Chinese Acad Sci Inst Microelect Key Lab Microelect Devices & Integrated Technol Beijing 100029 Peoples R China|Univ Chinese Acad Sci Sch Microelect Beijing 100049 Peoples R China;

    Chinese Acad Sci Inst Microelect Key Lab Microelect Devices & Integrated Technol Beijing 100029 Peoples R China|Univ Chinese Acad Sci Sch Microelect Beijing 100049 Peoples R China;

    Beijing Univ Technol Fac Informat Technol Sch Microelect Beijing 100124 Peoples R China;

    Chinese Acad Sci Inst Microelect Key Lab Microelect Devices & Integrated Technol Beijing 100029 Peoples R China|Univ Chinese Acad Sci Sch Microelect Beijing 100049 Peoples R China;

    Chinese Acad Sci Inst Microelect Key Lab Microelect Devices & Integrated Technol Beijing 100029 Peoples R China|Univ Chinese Acad Sci Sch Microelect Beijing 100049 Peoples R China;

    Chinese Acad Sci Inst Microelect Key Lab Microelect Devices & Integrated Technol Beijing 100029 Peoples R China|Univ Chinese Acad Sci Sch Microelect Beijing 100049 Peoples R China;

    Chinese Acad Sci Inst Microelect Key Lab Microelect Devices & Integrated Technol Beijing 100029 Peoples R China|Univ Chinese Acad Sci Sch Microelect Beijing 100049 Peoples R China;

    Weifang Univ Sch Phys & Optoelect Engn Weifang 261061 Peoples R China;

    Chinese Acad Sci Inst Microelect Key Lab Microelect Devices & Integrated Technol Beijing 100029 Peoples R China|Univ Chinese Acad Sci Sch Microelect Beijing 100049 Peoples R China;

    Chinese Acad Sci Inst Microelect Key Lab Microelect Devices & Integrated Technol Beijing 100029 Peoples R China|Univ Chinese Acad Sci Sch Microelect Beijing 100049 Peoples R China;

    Chinese Acad Sci Inst Microelect Key Lab Microelect Devices & Integrated Technol Beijing 100029 Peoples R China|Univ Chinese Acad Sci Sch Microelect Beijing 100049 Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Depolarization field; ferroelectric FET (FeFET); interfacial charges; nonvolatile memory; retention;

    机译：去极化场;铁电FET（FEFET）;界面收费;非易失性记忆;保留;

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