Analytical drain current model to study the impact of interface trap charges on device performance of Double Gate Ge Ferroelectric FET (DGGeFeFET)

摘要

In the present study, an analytical model has been proposed to study drain current characteristics for long channel Double Gate Germanium Ferroelectric FET (DGGeFeFET) by solving Poisson's equation and Landau-Khalatnikov equation. It has been shown that by incorporating ferroelectric layer with a device with Germanium channel a significant increase in current drivability can be achieved and also the major drawbacks of high leakage current and large inherent interface trap density in Ge based devices can be eliminated. To gain insight as to how negative capacitance results in improvement in device characteristics of DGGeFeFET in the presence of interface trap charges, we have done a comparative analysis with Double Gate Germanium FET (DGGeFET) for various values of interface trap density. It was found that the negative capacitance can help to overcome the deterioration in device characteristics which is a result of presence of interface trap charges.