A Low Reverse Recovery Charge Superjunction MOSFET With an Integrated Tunneling Diode

摘要

A superjunction MOSFET with an integrated tunnelingdiode is proposedand investigatedby simulations in this article. The tunneling diode comprised the N+ region and the P+ region on the surface of the P-base region is connected in series with the P+/P-pillar/N+ ( sub) diode isolated by an oxide layer. The electrons are prevented from injecting into the P-pillar region from both the N-pillar region and the N+ (sub) region, which leads to a low reverse recovery charge in the proposed device. As a result, up to 72.2% and 74.1% reduction in the reverse recovery charge could be achieved when compared with the conventional one at 300 and 400 K, respectively.