Data Transmission Capabilities of Silicon Avalanche Mode Light-Emitting Diodes

摘要

The data transmission capabilities of silicon avalanche mode light-emitting diodes (AMLEDs) were investigated, and the results are correlated with the multiplication noise and leakage current. The incoming data were modulated using pulse-position modulation, and the bit error rate (BER) and jitter in the transmitted data were measured. The results indicate an intrinsically low speed in terms of BER and jitter. From various size AMLEDs, temperature variations, and optical excitations, it is shown that the speed can be improved by using AMLEDs with a: 1) relatively high multiplication noise; 2) relatively high leakage current; and 3) higher charge-per-bit. Design recommendations for the high-speed AMLEDs are discussed.