Leakage current degradation in n-MOSFETs due to hot-electron stress

摘要

The field-induced drain-leakage current can become significant in NMOS devices with thin gate oxides. This leakage current component is found to be more prominent in devices with gate-drain overlap and can increase considerably with hot-electron stress. A method which shows how measuring the gate voltage needed to obtain a constant leakage value of 0.1 nA can yield useful information on the interface charge trap density is discussed.