A hot-carrier analysis of submicrometer MOSFET's

摘要

Based on Monte Carlo (MC) device simulations, an analysis of hot-carrier effects in submicrometer n-MOSFETs is presented that provides detailed insight because the high-energy electrons are treated directly. The DC stress characteristics of both lightly-doped drain (LDD) and conventional As source/drain devices are found to correlate with the surface hot-electron concentration, and agreement with experimental data shows that the electron flux above 3 eV, integrated along the channel, can be used to predict device degradation. The simulations indicate that the whole DC stress characteristic can be attributed to hot electrons, while the holes generated by impact ionization have a very small probability of gaining enough energy to be injected over the oxide barrier.