Interface characterization of silicon epitaxial lateral growth over existing SiO/sub 2/ for three-dimensional CMOS structures

摘要

The silicon-silicon dioxide interface created by the epitaxial lateral growth of monocrystalline silicon (ELO) over existing thermally oxidized silicon was investigated using a novel device structure. This structure is proposed as the basic building block of technology for the fabrication of locally restricted three-dimensional integrated CMOS circuits, as well as advanced bipolar devices. Results are reported from the investigation of the surface states of this silicon-on-insulator (SOI) interface. It is demonstrated that these interfaces can exhibit characteristics comparable to those interfaces created by the thermal oxidation of silicon. The SOI interface surface state densities, as grown, were measured to be about 2*10/sup 11/ cm/sup -2/ eV/sup -1/ at midgap energies. It is believed that H/sub 2/ from the epitaxial growth ambient is trapped at the interface and neutralizes surface states.