Comparison of p-channel lateral insulated-gate bipolar transistors with and without collector shorts

摘要

The performances of p-channel lateral insulated-gate bipolar transistors (LIGBTs) with and without collector shorts on n/sup -/ epi/sup +/ substrates are compared. The collector-shorted devices have a 4* improvement in turn-off time but about 1-V higher forward drop, due to a substantially reduced vertical current component. The addition of a buried layer on the emitter side increases the forward drop and reduces the turn-off time slightly for both types of LIGBTs. The presence of the collector shorts significantly improves the breakdown voltage but increases the percentage of the lateral current component, leading to a lower maximum gate controllable current.