LATERAL INSULATED-GATE BIPOLAR TRANSISTOR AND A METHOD FOR CONFIGURING THE SAME, CAPABLE OF CONTROLLING THE PATH OF HOLE CURRENT INJECTED FROM A COLLECTOR

摘要

PURPOSE: A lateral insulated-gate bipolar transistor and a method for configuring the same are provided to form a deep ion implantation region corresponding to the opening region of a collector ion implantation region, and to reduce hole current injected to a base region in the lower part of an emitter ion implantation region.;CONSTITUTION: A collector ion implantation region(105) of a first conductivity type is formed on a semiconductor substrate(101) of the first conductivity type. A buried insulating layer(107) is formed in the interface of the upper surface of the collector ion implantation region and a drift region(103). A base region(109) of the first conductivity type is formed in the upper surface of an open region in the semiconductor substrate. A gate electrode(113) is formed between the adjacent base regions on the semiconductor substrate. An emitter ion implantation region(115) of a second conductivity type is formed in the lateral part of the gate electrode. An insulating layer(119) is formed in the upper surface of the semiconductor substrate including the gate electrode.;COPYRIGHT KIPO 2013