Experimental Study of Two-Dimensional Confinement Effects on Reverse-Biased Current Characteristics of Ultrathin Silicon-on-Insulator Lateral, Unidirectional, Bipolar-Type Insulated-Gate Transistors

摘要

In this paper, the low-temperature behavior of reverse-biased lateral, unidirectional, bipolar-type insulated-gate transistors (lubistors) fabricated with a 10-nm-thick silicon-on-insulator (SOI) layer is described. Steplike current dependence on reverse bias is observed even at room temperature as well as at low temperatures, which suggests distinct quantum transport in the thin silicon layer. It is demonstrated that the effective activation energies of generation-recombination centers are shallower than simply expected, which has been examined on the basis of theoretical calculations. The quantum confinement effect on the generation-recombination process is strongly illustrated under the reverse-biased conditions.