Significant long-term reduction in n-channel MESFET subthreshold leakage using ammonium-sulfide surface treated gates

摘要

Ammonium-sulfide ((NH/sub 4/)/sub 2/S) treated gates have been employed in the fabrication of GaAs MESFETs that exhibit a remarkable reduction in subthreshold leakage current. A greater than 100-fold reduction in drain current minimum is observed due to a decrease in Schottky gate leakage. The electrical characteristics have remained stable for over a year during undesiccated storage at room temperature, despite the absence of passivation layers.