The Effect of Impact Ionization on the Subthreshold Leakage Current in N-Channel Double-Gate SOI Transistors

摘要

The effect of impact ionization on the subthreshold leakage current in N-channel double-gate transistors has been studied for the first time. The simulated subthreshold current with the impact ionization model shows higher value than the current without impact ionization model. This is mainly due to the holes injected from the drain high field region, resulting in an increased electron current due to the potential increase in the bulk. Therefore, the impact ionization model must be included for the accurate subthreshold current simulation. This leakage current, moreover, can be an additional limiting factor in the optimization of deep sub-100nm double-gate transistors.