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Z2FET Field-effect transistor with a vertical subthreshold slope and with no impact ionization
Z2FET Field-effect transistor with a vertical subthreshold slope and with no impact ionization
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机译:Z 2 Sup> FET场效应晶体管,具有垂直亚阈值斜率且无碰撞电离
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摘要
The transistor comprises first and second source/drain electrodes formed in a semiconductor film by N-doped and P-doped areas, respectively. A polarization voltage is applied between the two source/drain electrodes in order to impose to the P-doped electrode a potential higher than that of the N-doped electrode. The transistor comprises first and second devices for generating a potential barrier in the semiconductor film. The two potential barriers are opposed to the passage of the charge carriers emitted by the first and second source/drain electrodes, respectively. The two potential barriers are shifted with respect to an axis connecting the two source/drain electrodes. The two devices for generating a potential barrier are configured to generate a potential barrier having a variable amplitude and it are electrically connected to the gate and to the counter electrode.
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