Improved floating-gate devices using standard CMOS technology

摘要

A standard 2- mu m, double-polysilicon, CMOS technology has been used to fabricate a floating-gate MOSFET. The 12- mu m*17- mu m device is electrically programmed using hot-electron injection and electrically erased using Fowler-Nordheim tunneling. Both operations can be performed with voltages lower than the junction breakdown voltage of the process, allowing high integration density and improved reliability. Programming times of hundreds of microseconds and erase times of tends of milliseconds are reported, both for a Delta V/sub t/ of 3 V. The programming time is about five orders of magnitude shorter than that of previously reported devices in a similar technology. The device is suitable for both analog and digital applications.