circuit for selectively deleting a single row of a memory in the flash eeprom devices in standard cmos technology.

• 1. 一种快闪存储器及用于快闪存储器的电压反馈方法和电路 [P] . 中国专利： CN105632553A . 2016-06-01
• 2. 整合有闪存和EEPROM的存储器 [P] . 中国专利： CN103093820B . 2016.04.13
• 3. circuit for selectively deleting a single row of a memory in the flash eeprom devices in standard cmos technology. [P] . ITRM910088D0 . 1991-02-06

  机译： 电路，用于以标准cmos技术有选择地删除闪存eeprom设备中的一行存储器。

• 4. Circuit for selectively deleting a single line of memory in flash EEPROM devices in standard CMOS technology [P] . IT1244917B . 1994-09-13

  机译： 在标准CMOS技术中用于选择性删除闪存EEPROM设备中单行存储器的电路

• 5. Row decoder for a flash-EEPROM memory device with the possibility of selective erasing of a sub-group of rows of a sector [P] . 欧洲知识产权局专利： EP0920023B1 . 2010-06-30

  机译： 用于闪存EEPROM存储设备的行解码器，可以有选择地擦除扇区行的子组

• 1. A Phase Change Memory Chip Based on Ti Sb Te Alloy in 40-nm Standard CMOS Technology [J] . Zhitang Song, Yi Peng Zhan, Daolin Cai, 纳微快报：英文版 . 2015,第002期
• 2. A single-ended wideband reconfigurable receiver front-end for multi-mode multi-standard applications in 0. 18 μm CMOS [J] . Tao Jian, Fan Xiangning, Bao Kuan 高技术通讯（英文版） . 2019,第001期
• 3. Selectively Multiple-Valued Memory Design Using Negative Differential Resistance Circuits Implemented by Standard SiGe BiCMOS Process [C] . WANG Qingfeng International Conference on Communications, Circuits and Systems Proceedings . 2008
• 4. Bridging the gap between CMOS and QCA: The integration of single electron devices and CMOS technology. [D] . Prager, Aaron Anthony. 2010
• 5. Characteristic Fluctuations of Dynamic Power Delay Induced by Random Nanosized Titanium Nitride Grains and the Aspect Ratio Effect of Gate-All-Around Nanowire CMOS Devices and Circuits [O] . Yiming Li, Chieh-Yang Chen, Min-Hui Chuang, 2019
• 6. High Density and Low Voltage Programmable Scaled SONOS Nonvolatile Memory for the Byte and Flash-Erased Type EEPROMs [O] . 2002
• 7. In the Matter of Certain EPROM, EEPROM, Flash Memory, and Flash Microcontroller211 Semiconductor Devices, and Products Containing Same. Investigation No. 337-TA-395 [R] . 1998

• 1. A Phase Change Memory Chip Based on TiSbTe Alloy in 40-nm Standard CMOS Technology [J] . Zhitang Song ,YiPeng Zhan ,Daolin Cai . 安徽地质 . 2015,第002期
• 2. EEPROM与flash Memory [J] . 于宗光 ,魏同立 . 电子器件 . 1997,第001期
• 3. 简易诊断技术用于设备中CPU及内存储器等电路的调试和维修 [C] . 杨宗正 . 第十届全国设备监测与诊断技术学术会议 . 2000
• 4. RFID中可靠低功耗EEPROM存储器关键电路的研究 [A] . 向姝蓉 . 2018