Resolving the mechanisms of current gain increase under forward current stress in poly emitter n-p-n transistors

摘要

The mechanisms behind moderate bias current gain ( beta ) increase of n-p-n transistors under forward current stress are investigated in polysilicon emitter transistors processed with different dopant impurities and concentrations, and with different amounts of hydrogen plasma treatment. The results suggest that transport of atomic hydrogen toward the poly/monosilicon interface region and its subsequent passivation of dangling bonds at both poly grain boundaries and the poly/monosilicon interface are responsible for the moderate bias beta increase. To alleviate the beta instability, elimination of hydrogen involvement and/or a higher doping concentration inside the poly emitter in the back-end-of-line (BEOL) processes are/is recommended.