500 V, N-Channel atomic lattice layout (ALL) IGBT's with superior latching immunity

摘要

Experimental and simulation results for the impact of Atomic Lattice Layout (ALL) geometry on the latchup performance of 500 V n-channel IGBT's is reported here for the first time and is compared to the conventional square, hexagonal and stripe geometries. It is shown that the ALL cell IGBT's provide a superior trade-off between optimization of forward drop and latching current with a small penalty in the forward drop.