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Vertical Gate RF SOI LIGBT for SPICs with Significantly Improved Latch-Up Immunity

机译：垂直门RF SOI光用于PICS，具有显着改善的闩锁免疫力

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Haipeng Zhang; Ruisheng Qi; Liang Zhang; Buchun Su; Dejun Wang;
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年度 2011
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1. Vertical Gate RF SOI LIGBT for SPICs with Significantly Improved Latch-Up Immunity [J] . Haipeng Zhang, Ruisheng Qi, Liang Zhang, VLSI Design . 2011,第Null期

机译：适用于PIC的垂直门FDSOI LIGHT，具有显着提高的闩锁抗扰性
2. Vertical Gate RF SOI LIGBT for SPICs with Significantly Improved Latch-Up Immunity [J] . HaipengZhang, RuishengQi, LiangZhang, VLSI Design . 2011,第3期

机译：PIC的垂直栅极RF SOI灯，具有更高的闩锁抗扰性
3. ESD robustness concern for SOI-LIGBTs with typical latch-up immunity structures [J] . Ye Ran, Liu Siyang, Sun Weifeng, Solid-State Electronics . 2017,第nova期

机译：具有典型闩锁抗扰结构的SOI-LIGBT的ESD耐用性问题
4. Low On-state Voltage and Latch-up Immunity Thin SOI LIGBT with Multi-Segmented Trench Gates [C] . Chao Yang, Xiaorong Luo, Tao Sun, International Symposium on Power Semiconductor Devices and ICs . 2019

机译：低导通电压和闩锁抗扰性具有多段沟槽栅极的薄型SOI LIGBT
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Vertical Gate RF SOI LIGBT for SPICs with Significantly Improved Latch-Up Immunity

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