Integrated enhancement- and depletion-mode FET's in modulation-doped Si/SiGe heterostructures

摘要

We present results of enhancement and depletion mode transistors fabricated on the same layer structure of Si/SiGe, without using gate recess. The current in the enhancement mode device is controlled by a p-n junction, while that of the depletion-mode device is controlled by a Schottky barrier. A peak transconductance of 327 mS/mm and 417 mS/mm has been achieved in 0.5-/spl mu/m gate length depletion and enhancement-mode transistors, respectively.