Monolithic CMOS digital integrated circuits in 6H-SiC using an implanted p-well process

摘要

We report the first p-well Complementary Metal Oxide Semiconductor (CMOS) digital integrated circuits in 6H-SiC. Enhancement mode NMOSFET's and PMOSFET's are fabricated on implanted p-wells and n-type epilayers, respectively. CMOS logic circuits such as inverters, NAND, NOR, XOR, flip-flops, half adders, and 11-stage ring oscillators are implemented using these devices and operated at room temperature, The inverters show stable operation at room temperature and 300/spl deg/C with V/sub dd/=10 and 15 V.