50-nm channel nMOSFET/SIMOX with an ultrathin 2- or 6-nm thick silicon layer and their significant features of operations

摘要

This paper demonstrates mesoscopic scale nMOSFET's fabricated by Separation by IMplanted OXygen (SIMOX) technology on a trial basis and describes their explicit quantum-mechanical transport phenomena: enhanced threshold voltage in an extremely thin silicon-on-insulator (SOI) structure and enhanced short-channel effect at room temperature as well as a weak interference (WI) effect at relatively high temperatures (/spl sim/40 K), which are characterized specifically in extremely thin SOI short-channel devices.