0.1- mu m-gate, ultrathin-film CMOS devices using SIMOX substrate with 80-nm-thick buried oxide layer

摘要

A 0.1- mu m-gate CMOS/SIMOX is fabricated using high-quality SIMOX substrates with a sub-100-nm-thick buried oxide layer. In addition, 0.085- mu m-gate nMOSFETs/SIMOX and pMOSFETs/SIMOX with 8-nm-thick silicon active layers have been fabricated. The prospects for improving the performance of 0.1- mu m-gate CMOS/SIMOX devices are discussed in detail.