Post poly-Si gate rapid thermal nitridation for boron penetration reduction and oxide reliability improvement

摘要

Boron penetration from p/sup +/ doped poly-Si gates in PMOSFET is greatly reduced by post poly-Si gate rapid thermal nitridation. Gate oxide reliability against boron penetration is significantly enhanced. When post poly-Si nitridation is combined with N/sub 2/O annealed gate oxides, gate oxide charge-to-breakdown is markedly improved.