Pseudomorphic InP HEMTs with dry-etched source vias having 190 mW output power and 40% PAE at V-band

摘要

We report state-of-the-art V-band power performance of 0.15-/spl mu/m gate length InGaAs/InAlAs/InP HEMT's which have 15 /spl mu/m/spl times/23 /spl mu/m dry-etched through-substrate source vias (substrate thickness 50 /spl mu/m). The 500-/spl mu/m wide InP HEMT's were measured in fixture at 60 GHz and demonstrated an output power of 190 mW with 40% power-added efficiency (PAE) and 6.8 dB power gain at an input power of 16 dBm. These results represent the best combination of power and PAE reported to date at this frequency for any solid state device. The results are achieved through optimization of the InP-based heterostructure which incorporates a graded pseudomorphic InGaAs channel and a graded pseudomorphic InAlAs Schottky barrier layer, and the use of 15 /spl mu/m/spl times/23 /spl mu/m dry-etched through-substrate source vias.