Graded-barrier graded-channel InP pseudomorphic power HEMT with 40power added efficiency and 200 mW output power at 60 GHz

摘要

Summary form only given. We present state-of-the-art power and PAEnresults of InGaAs-InAlAs-InP HEMTs with optimized graded channel andngraded Schottky barrier layers which demonstrate, for the first time,nthat InP-based HEMTs have a considerably better power/PAE combinationnthan GaAs-based HEMTs at V-band. The 0.15 μm gate length, eight gatenfinger, 500 μm wide InP HEMTs were measured in a fixture underncontinuous wave (CW) conditions and showed 23 dBm (200 mW) output powernand 40% PAE at 60 GHz with an input power of 17 dBm, a drain bias of 3nV, and a drain current of 125 mA. These results represent the bestnreported V-band power/PAE performance to date, and a comparison of thesenresults with previously reported results for both InP- and GaAs-basednHEMTs is shown. Our state-of-the-art results are attributed to the usenof an optimized heterostructure incorporating pseudomorphic gradednchannel and graded Schottky barrier layers, and the use of compact 15nμm×25 μm dry etched through-substrate vias (substratenthickness of 50 μm). The heterostructure was designed to achieve highngain, current (Imax) and breakdown voltage; all of which arenrequirements for a device with high power and PAE