Effect of substrate bias on the performance and reliability of the split-gate source-side injected flash memory

摘要

The effects of the substrate bias on the characteristics of split-gate EEPROM/Flash memory cells have been investigated. It is experimentally demonstrated that applying negative substrate bias (NSB) can improve the programming and erasing speed significantly. The improvements can be attributed that NSB effectively increase the needed electrical fields for fast programming and erasing, respectively. Furthermore, the cycling endurance is improved considerably if NSB is applied for programming and erasing operation both.