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A single electron binary-decision-diagram quantum logic circuit based on Schottky wrap gate control of a GaAs nanowire hexagon

机译:GaAs纳米线六角形基于肖特基绕栅控制的单电子二元决策图量子逻辑电路

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摘要

A novel hexagonal binary-decision-diagram (BDD) quantum logic circuit approach for III-V quantum large scale integrated circuits is proposed and its basic feasibility is demonstrated. In this approach, a III-V hexagonal nanowire network is controlled by Schottky wrap gates (WPGs) to implement BDD logic architecture by path switching. A novel single electron BDD OR logic circuit is successfully fabricated on a GaAs nanowire hexagon and correct circuit operation has been confirmed from 1.5 K to 120 K, showing that the WPG BDD circuit can operate over a wide temperature range by trading off between the power-delay product and the operation temperature.
机译:提出了一种新颖的六边形二元决策图(BDD)量子逻辑电路方法,用于III-V族量子大规模集成电路,并证明了其基本可行性。在这种方法中,III-V六角形纳米线网络由肖特基绕线闸(WPG)控制,以通过路径切换实现BDD逻辑架构。一种新颖的单电子BDD OR逻辑电路已成功地在GaAs纳米线六边形上制造,并且已经证实在1.5 K至120 K的范围内可以正确运行,这表明WPG BDD电路可以通过在功率与延迟产品和工作温度。

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