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LOGIC CIRCUIT USING GAAS SCHOTTKY BARRIER GATE TYPE FIELD EFFECT TRANSISTOR
LOGIC CIRCUIT USING GAAS SCHOTTKY BARRIER GATE TYPE FIELD EFFECT TRANSISTOR
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机译:使用GAAS肖特基势垒门型场效应晶体管的逻辑电路
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摘要
PURPOSE:To compose a logic circuit having a small occupied area and superior design by connecting other normally OFF Tr connected through a gate, a drain, and a resistor to the drain electrode of a normally OFF Tr as a load. CONSTITUTION:A normally OFF GaAsMESFET 54 for load connected through a gate electrode 51, a drain electrode 52, and a resistor 53 is connected to the drain electrode 12 of a GaAs Schottky barrier gate field effect transistor (MESFET)11 as an active element. Such a current-voltage characteristic at a load section shows a saturation characteristic as shown in a drawing and the saturation current Is is almost equal to the saturation current of a same-shaped normally OFF GaAsMESFET. Register 53 is required to be made larger in order to ignore the current flowing into the resistor 53 as compared to the saturation current Is.
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