Invetigation of reconfigurable silicon nanowire Schottky Barrier transistors-based logic gate circuits and SRAM cell

摘要

Reconfigurable Silicon nanowire Schottky Barrier transistors (RFETs) with configurability to be programmed as n/p-type polarity are promising for future integrated circuits. In this work, the tunable polarity characteristics of RFETs are investigated. TCAD simulations have been performed for RFETs-based INV, NOR, NAND logic gates and SRAM cell. 4-terminal RFETs presented show the potential of programmable circuits and high density integration.