High-Power P-i-N Diode With Local Lifetime Control Using Palladium Diffusion Controlled by Radiation Defects

摘要

We demonstrate for the first time a high-power P-i-N diode with local lifetime control using palladium (Pd) diffusion. Low-temperature (600℃-700℃) diffusion of Pd is stimulated by radiation defects resulting from alpha-particle irradiation (4{sup left}He{sup}(2+): 10 MeV, 10{sup}12 cm{sup}(-2)). The region of maximal radiation damage of Gaussian shape is decorated by substitutional Pd after diffusion from a palladium silicide surface layer through the P{sup}+-P region into the N-base close to the anode junction. Significantly lower leakage current compared to that of standard 4{sup left}He{sup}(2+) irradiation and very good ruggedness under fast recovery (di/dt ≈ 500 A/μs, V{sub}R ≈ 2 kV) is demonstrated for Pd diffusion at 600℃.