Write-Once Diode/Antifuse Memory Element with a Sol-Gel Silica Antifuse Cured at Low Temperature

摘要

A write-once programmable memory element is based on a spin-coated sol-gel silica antifuse layer cured at 100℃. This antifuse is integrated with a thin-film silicon diode deposited at 160℃ by hot-wire chemical vapor deposition/When a 3 to 5 V electrical pulse is applied across a diode/antifuse element, the silica breaks down suddenly and the current passing through the element increases irreversibly by more than about 10{sup}4. The on-state exhibits a diode-like current-voltage characteristic with a forward-reverse asymmetry of nearly 100 at 1 V and is stable if there was hexamethyldisilazane treatment of the wet-gel film before curing.