High-Temperature Operation of AlGaN/GaN HEMTs Direct-Coupled FET Logic (DCFL) Integrated Circuits

摘要

This letter presents the high-temperature performance of AlGaN/GaN HEMT direct-coupled FET logic (DCFL) integrated circuits. At 375 $^{circ}hbox{C}$, enhancement-mode (E-mode) AlGaN/GaN HEMTs which are used as drivers in DCFL circuits exhibit proper E-mode operation with a threshold voltage ($V_{rm TH}$) of 0.24 V and a peak current density of 56 mA/mm. The monolithically integrated E/D-mode AlGaN/GaN HEMTs DCFL circuits deliver stable operations at 375 $^{circ}hbox{C}$: An E/D-HEMT inverter with a drive/load ratio of 10 exhibits 0.1 V for logic-low noise margin ($hbox{NM}_{L}$) and 0.3 V for logic-high-noise margin ($hbox{NM}_{H}$) at a supply voltage ($V_{rm DD}$) of 3.0 V; a 17-stage ring oscillator exhibits a maximum oscillation frequency of 66 MHz, corresponding to a minimum propagation delay ( $tau_{rm pd}$) of 446 ps/stage at $V_{rm DD}$ of 3.0 V.