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Lifetime Extension of RF MEMS Direct Contact Switches in Hot Switching Operations by Ball Grid Array Dimple Design

机译:通过球栅阵列酒窝设计延长热切换操作中RF MEMS直接接触开关的使用寿命

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Direct contact RF microelectromechanical systems switches have demonstrated excellent ultrawideband performance from dc to 100 GHz. However, they are prone to failures due to contact adhesion and arcing, particularly for pure-gold/pure-gold contacts. In this letter, we present a new contact design employing ball grid array (BGA) dimples that limit the effective contact area to a few tens of nanometers in diameter. We experimentally show the performance of the BGA dimple with pure-gold/pure-gold contacts and demonstrate RF power handling greater than 1 W during hot switching in excess of 100 million cycles
机译:直接接触式射频微机电系统开关已经展示了从直流到100 GHz的出色超宽带性能。然而,由于触点的粘附和电弧,它们易于失效,特别是对于纯金/纯金触点。在这封信中,我们介绍了一种采用球栅阵列(BGA)凹痕的新接触设计,该凹痕将有效接触面积限制为直径几十纳米。我们通过实验展示了具有纯金/纯金触点的BGA凹窝的性能,并演示了在超过1亿个循环的热切换过程中,RF功率处理能力大于1 W

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