Temperature-Oriented Experiment and Simulation as Corroborating Evidence of MOSFET Backscattering Theory

摘要

The MOSFET backscattering theory relies on a so-called "kB T" layer. In this letter, we adopt two different approaches to examine the temperature dependencies of the width spanned by this critical zone. First of all, a 55-nm channel length n-MOSFET is extensively characterized at three temperatures of 233 K, 263 K, and 298 K while undergoing a parameter decoupling/transformation process. A unique relationship is straightforwardly created and is comparable with that in the literature: The width of the "kBT" layer is proportional to the square root of temperature. The case of 77 K is also projected. Other corroborating evidence is a Monte Carlo particle simulation conducted on an 80-nm-long silicon conductor with the "kBT" layer's width proportional to the temperature in the high field region. Without adjusting any parameters, the backscattering theory is shown to work well for the demonstrated temperatures down to 77 K