High-Performance Gate-All-Around GeOI p-MOSFETs Fabricated by Rapid Melt Growth Using Plasma Nitridation and ALD $hbox{Al}_{2}hbox{O}_{3}$ Gate Dielectric and Self-Aligned NiGe Contacts

Feng J.; Thareja G.; Kobayashi M.; Chen S.; Poon A.; Bai Y.; Griffin P. B.; Wong S. S.; Nishi Y.; Plummer J. D.

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High-Performance Gate-All-Around GeOI p-MOSFETs Fabricated by Rapid Melt Growth Using Plasma Nitridation and ALD $hbox{Al}_{2}hbox{O}_{3}$ Gate Dielectric and Self-Aligned NiGe Contacts

机译：通过等离子氮化和ALD $ hbox {Al} _ {2} hbox {O} _ {3} $栅介电和自对准NiGe触头通过快速熔体生长制造的高性能栅极全能GeOI p-MOSFET

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Rapid melt growth was used to fabricate gate-all-around germanium-on-insulator (GeOI) p-MOSFETs with plasma-nitrided Ge surface, $hbox{Al}_{2}hbox{O}_{3}$ high-

机译：快速的熔体生长用于制造具有等离子氮化Ge表面，$ hbox {Al} _ {2} hbox {O} _ {3} $高-的全绝缘栅绝缘锗（GeOI）p-MOSFET。

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《IEEE Electron Device Letters》 |2008年第7期|p.805-807|共3页
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Feng J.; Thareja G.; Kobayashi M.; Chen S.; Poon A.; Bai Y.; Griffin P. B.; Wong S. S.; Nishi Y.; Plummer J. D.;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
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正文语种 eng
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1. Ge p-MOSFETs With Scaled ALD $hbox{La}_{2} hbox{O}_{3}/hbox{ZrO}_{2}$ Gate Dielectrics [J] . Henkel C., Abermann S., Bethge O., Electron Devices, IEEE Transactions on . 2010,第12期

机译：带有定标ALD的Ge p-MOSFET $ hbox {La} _ {2} hbox {O} _ {3} / hbox {ZrO} _ {2} $门极电介质
2. Impact of Forming Gas Annealing on the Performance of Surface-Channel $hbox{In}_{0.53}hbox{Ga}_{0.47}hbox{As}$ MOSFETs With an ALD $hbox{Al}_{2}hbox{O}_{3}$ Gate Dielectric [J] . Djara V., Cherkaoui K., Schmidt M., Electron Devices, IEEE Transactions on . 2012,第4期

机译：形成气体退火对表面通道$ hbox {In} _ {0.53} hbox {Ga} _ {0.47} hbox {As} $带有ALD $ hbox {Al} _ {2} hbox {O } _ {3} $门电介质
3. Inversion-Mode Self-Aligned $hbox{In}_{0.53}hbox{Ga}_{0.47}hbox{As}$ N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor With HfAlO Gate Dielectric and TaN Metal Gate [J] . Lin J. Q., Lee S. J., Oh H. J., IEEE Electron Device Letters . 2008,第9期

机译：反转模式自对准$ hbox {In} _ {0.53} hbox {Ga} _ {0.47} hbox {As} $带有HfAlO栅极电介质和TaN金属栅极的N沟道金属氧化物半导体场效应晶体管
4. 1/f noise in 0.12 pm P-MOSFETs with High-kand metal gate fabricated in a Si Process Line on200 mm GeOI Wafers [C] . J. Gyani, F. Martinez, S. Soliveres, International Conference on Noise and Fluctuations . 2009

机译：0.12 PM P-MOSFET中的1 / F噪声，带有高k和金属栅极，在SI工艺系列上的高kand金属栅极on200 mm Geoi晶片
5. Studies in remote plasma nitridation of silicon dioxide for metal-oxide-semiconductor gate dielectric applications. [D] . Eason, Kwame Nkrumah. 2000

机译：用于金属氧化物半导体栅极介电应用的二氧化硅远程等离子体氮化研究。
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High-Performance Gate-All-Around GeOI p-MOSFETs Fabricated by Rapid Melt Growth Using Plasma Nitridation and ALD $hbox{Al}_{2}hbox{O}_{3}$ Gate Dielectric and Self-Aligned NiGe Contacts

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