Inversion-Mode Self-Aligned $hbox{In}_{0.53}hbox{Ga}_{0.47}hbox{As}$ N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor With HfAlO Gate Dielectric and TaN Metal Gate

摘要

A high-performance $hbox{In}_{0.53}hbox{Ga}_{0.47}hbox{As}$ n-channel MOSFET integrated with a HfAlO gate dielectric and a TaN gate electrode was fabricated using a self-aligned process. After HCl cleaning and $(hbox{NH}_{4})_{2}hbox{S}$ treatment, the chemical vapor deposition HfAlO growth on $ hbox{In}_{0.53}hbox{Ga}_{0.47}hbox{As}$ exhibits a high-quality interface. The fabricated nMOSFET with a HfAlO gate oxide thickness of 11.7 nm shows a gate leakage current density as low as $hbox{2.5} times hbox{10}^{-7} hbox{A/cm}^{2}$ at $V_{g}$ of 1 V. Excellent inversion capacitance was illustrated. Silicon implantation was self-aligned to the gate, and low-temperature activation for source and drain was achieved by rapid thermal annealing at 600 $^{circ}hbox{C}$ for 1 min. The source and drain junction exhibited an excellent rectifying characteristic and high forward current. The result of an $hbox{In}_{0.53}hbox{Ga}_{0.47}hbox{As}$ nMOSFET shows well-performed $I_{d}$– $V_{d}$ and $I_{d}$– $V_{g}$ characteristics. The record high peak electron mobility of 1560 $hbox{cm}^{2}/hbox{Vs}$ has been achieved without any correction methods considering inte--rface charge and parasitic resistance.