Comparison of Junctionless and Conventional Trigate Transistors With $L_{g}$ Down to 26 nm

摘要

Junctionless accumulation-mode (JAM) devices with channel lengths $L_{g}$ down to 26 nm were fabricated on a trigate process and compared to conventional inversion-mode (IM) devices. This letter represents the first experimental comparison of short-channel JAM-to-IM devices at matched off-state leakage $(I_{rm off})$ . The JAM devices show better channel mobility (when moderately doped) and lower gate capacitance than the IM control counterparts at matched $I_{rm off}$. However, the JAM devices also show reduced gate control and degraded short-channel characteristics. The observed degraded behavior of JAM relative to IM is explained with the aid of device simulations and a simple analytic model of the channel charge.