A single-gate SOI nanosheet junctionless transistor at 10-nm gate length: design guidelines and comparison with the conventional SOI FinFET

摘要

We present a detailed study on the n-channel single-gate junctionless transistor (JLT) at the 10 - nm node. We investigate the influence of its structural parameters on the on-state current and the off-state leakage current. Furthermore, we show that the use of high-k spacers may not be advantageous in future nanoscale junctionless transistors and confirm this argument by simulation. We also present the results of our investigation on process variations, including the sensitivity of the JLT to random dopant fluctuations as well as the gate work function using Monte Carlo simulations. These results are then compared with those of a conventional FinFET. Finally, we provide design guidelines for JLTs at 10 - nm gate length.