Concurrent NBTI and Hot-Carrier Degradation in p-Channel MuGFETs

摘要

The experimental investigations on the concurrent negative-bias temperature instability (NBTI) and hot-carrier (HC) degradation in p-channel MuGFETs have been performed with different side-surface orientations and fin widths. The observed result of the enhanced HC degradation at elevated temperature is due to the interaction between NBTI and HC degradations. The enhanced concurrent effects for 0$^{circ}$ rotated fin body, which has (100) of top surface and (110) of side surface, could be explained by NBTI induced HC degradation. The enhanced concurrent effects with an increase of fin width could be explained by self-heating-induced the enhanced NBTI degradation.