Performance Enhancement of Thin-Film Transistors With Suspended Poly-Si Nanowire Channels by Embedding Silicon Nanocrystals in Gate Nitride

摘要

In this letter, we fabricated and characterized thin-film transistors with a suspended poly-Si nanowire (NW) channel and gate nitride with embedded silicon nanocrystals (Si NCs). The embedded Si NCs increase the surface roughness, thus reducing the adhesive force as the nitride is in contact with the poly-Si NW channel during the operation. Such a feature results in a reduction in pull-in voltage and sharper pull-out behavior. Moreover, this approach also greatly improves the endurance characteristics of the devices.