On a GaN-Based Light-Emitting Diode With an Aluminum Metal Mirror Deposited on Naturally-Textured V-Shaped Pits Grown on the p-GaN Surface

摘要

An interesting GaN-based light-emitting diode (LED) with an aluminum (Al) metal mirror deposited on naturally textured V-shaped pits (V-pits), grown on the device surface, is fabricated and studied. The V-pits is used to limit the total internal reflection as well as enhance light extraction, and the Al metal mirror is used to prevent photons from being absorbed by the Cr/Pt/Au metal pad. As compared with a conventional LED (with V-pits while without Al mirror), at 20 mA, the studied device exhibits 13.7% enhancement in light output power as well as 14% increment in external quantum efficiency. Therefore, for a LED with V-pits on top, the light extraction efficiency could be further improved by employing an Al metal mirror.