InP-HEMT X-band Low-Noise Amplifier With Ultralow 0.6-mW Power Consumption

摘要

We report a single-stage InP-high-electron-mobility-transistor (HEMT) X-band low-noise amplifier (LNA) featuring an ultralow dc power consumption at room temperature. The LNA was fabricated with the ETH Zürich 100-nm InP-HEMT MMIC coplanar waveguide process. When operated with a dc power consumption of only 0.6 mW, our LNA delivers a gain of 9.0 $pm$ 0.9 dB from 7 to 11 GHz with a minimum noise figure of 1.4 dB at 9.8 GHz. The excellent LNA performance is enabled by the favorable characteristics of our InP HEMTs under low-power-dissipation biases. For example, at a bias of $V_{rm DS} = hbox{0.5 V}$ and $I_{rm DS} = hbox{66.2 mA/mm}$, our $(hbox{0.1} times hbox{2} times hbox{50} mu hbox{m}^{2})$ InP HEMTs feature cutoff frequencies of $f_{T} = hbox{183 GHz}$ and $f_{rm MAX} = hbox{230 GHz}$ . The present results demonstrate the excellent capabilities of InP-HEMT technology for high-speed, low-voltage, and room-temperature low-power-consumption applications.