Northrop Grumman Corp., Redondo Beach, CA;
III-V semiconductors; aluminium compounds; field effect transistor switches; indium compounds; low noise amplifiers; phase shifters; power amplifiers; power semiconductor switches; wafer level packaging; AlSb-InAs; HEMT receivers; compact tristack transmit-receive module; light-weight applications; switches; tristack HEMT low-noise amplifier manufacture; ultralow-power applications; wafer-level-packaging technology; AlSb/InAs; HEMT; ultralow-power; wafer-level-packaging;
机译:超低功率应用的低温InAs / AlSb HEMT宽带低噪声中频放大器
机译:InAs / AlSb HEMT及其在超低功率宽带高增益低噪声放大器中的应用
机译:低功耗W波段CPWG InAs / AlSb HEMT低噪声放大器
机译:可制造的Tri-Stack ALSB / INAS HEMT低噪声放大器使用晶圆级包装技术进行轻量级和超级电源应用
机译:用于低噪声应用的铜/钛金属化GaAs MESFET和HEMT的制造,测试和可靠性建模。
机译:用于超低功耗低噪声应用的100MTnm AlSb / InAs HEMT
机译:超低功耗Inas / alsb HEmT Kaband低噪声放大器
机译:可制造的三叠层alsb / Inas HEmT低噪声放大器,采用晶圆级封装技术,适用于轻量级和超低功耗应用