Improved Charge-Trapping Characteristics of $ hbox{BaTiO}_{3}$ by Zr Doping for Nonvolatile Memory Applications

摘要

The charge-trapping characteristics of $hbox{BaTiO}_{3}$ film with and without Zr incorporation were investigated based on $hbox{Al}/ hbox{Al}_{2}hbox{O}_{3}/hbox{BaTiO}_{3}/hbox{SiO}_{2}/hbox{Si}$ capacitors. Compared with the device without Zr incorporation, the one with Zr incorporation showed a similar memory window (8.3 V at $pm$12 V for 1 s), but higher program speed at low gate voltage (3.2 V at $hbox{100} muhbox{s} + hbox{6} hbox{V}$) and better endurance and data retention (charge loss of 6.4% at 150 $^{circ} hbox{C}$ for $hbox{10}^{4} hbox{s}$), due to the Zr-doped $hbox{BaTiO}_{3}$ exhibiting higher charge-trapping efficiency and higher density of traps with deeper energy levels.