High-Performance Multilevel Resistive Switching Gadolinium Oxide Memristors With Hydrogen Plasma Immersion Ion Implantation Treatment

摘要

Multilevel resistive switching (RS) of gadolinium oxide $({rm Gd}_{x}{rm O}_{y})$ memristors treated by hydrogen plasma immersion ion implantation (PIII) was investigated. Hydrogen ions were implanted at the ${rm Pt}/{rm Gd}_{x}{rm O}_{y}$ interface to modify the oxygen-vacancy distribution, which was examined by the X-ray photoelectron spectroscopy. After the hydrogen PIII treatment, a forming process is needed to operate the ${rm Gd}_{x}{rm O}_{y}$ memristors and the RS mechanism is changed from Schottky emission to space-charge-limited conduction. Superior multilevel RS properties such as data retention for more than $10^{4}~{rm s}$ at 85 $^{circ}{rm C}$, and sequentially cycling test for more than $10^{3}$ times with a resistance ratio of approximately one order of magnitude between each state are realized, making the future high-density flash memory possible.